Job Description

Description

The opportunity

Join our SiC power-device team as an R&D intern and contribute to the future of power electronics. You'll support chip design and simulation while gaining hands-on experience across the full development cycle of SiC MOSFETs. Collaborate closely with experienced engineers and process specialists in a dynamic, inclusive environment. This is your chance to grow your TCAD skills and deepen your semiconductor knowledge in a real-world setting.

How you'll make an impact

Assist in the conceptual design and TCAD simulation of SiC power devices Work with our experienced engineers to refine device structures and optimize performance Predict electrical characteristics and validate simulation results Analyze data, document findings, and present insights in team meetings Contribute to regular project reviews with ideas for performance, cost and manufacturability improvements

Your background

Master's degree in Electrical Engineering, Physics, or Materials Science Experience with TCAD tools, ideally in SiC device simulation Understanding of SiC device physics Basic knowledge of semiconductor fabrication processes Strong analytical and data interpretation skills Fluent in English with excellent communication skills

More about us

We are a technology-driven company with a strong focus on innovation, continuous improvement, and sustainable manufacturing. We offer flexible working conditions, dedicated mentorship, and a supportive, inclusive environment where you can grow personally and professionally - empowering you to thrive while balancing life and work.

Qualified individuals with a disability may request a reasonable accommodation if you are unable or limited in your ability to use or access the Hitachi Energy career site as a result of your disability. You may request reasonable accommodations by completing a

general inquiry form

on our website. Please include your contact information and specific details about your required accommodation to support you during the job application process.

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